Focused Ion Beam Fabrication
Contains reports on thirteen research projects and a list of publications.
| Main Authors: | , , , , , , , , , , , , , , , , , , , , , , , , , |
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| Format: | Technical Report |
| Language: | English |
| Published: |
Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
2010
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/57138 |
| _version_ | 1826207817536634880 |
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| author | Melngailis, John Lezec, Henri J. Musil, Christian R. Mahoney, Leonard J. Chu, Alex Chu, Larry Shepard, Mark I. Antoniadis, Dimitri A. Turner, George W. Woodhouse, John D. Liao, Kenneth S. Kazior, Thomas E. Mozzi, Robert Murguia, James E. Lattes, Analisa L. Munroe, Scott C. Huh, Jeung-Soo Papadopoulos, Haralabos C. Hartney, Mark A. Shaver, David C. Tao, Tao Wilkinson, William Dubner, Andrew D. Wagner, Alfred Thompson, Carl V. Ro, Jaesang |
| author_facet | Melngailis, John Lezec, Henri J. Musil, Christian R. Mahoney, Leonard J. Chu, Alex Chu, Larry Shepard, Mark I. Antoniadis, Dimitri A. Turner, George W. Woodhouse, John D. Liao, Kenneth S. Kazior, Thomas E. Mozzi, Robert Murguia, James E. Lattes, Analisa L. Munroe, Scott C. Huh, Jeung-Soo Papadopoulos, Haralabos C. Hartney, Mark A. Shaver, David C. Tao, Tao Wilkinson, William Dubner, Andrew D. Wagner, Alfred Thompson, Carl V. Ro, Jaesang |
| author_sort | Melngailis, John |
| collection | MIT |
| description | Contains reports on thirteen research projects and a list of publications. |
| first_indexed | 2024-09-23T13:55:25Z |
| format | Technical Report |
| id | mit-1721.1/57138 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T13:55:25Z |
| publishDate | 2010 |
| publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| record_format | dspace |
| spelling | mit-1721.1/571382019-04-12T23:47:34Z Focused Ion Beam Fabrication Melngailis, John Lezec, Henri J. Musil, Christian R. Mahoney, Leonard J. Chu, Alex Chu, Larry Shepard, Mark I. Antoniadis, Dimitri A. Turner, George W. Woodhouse, John D. Liao, Kenneth S. Kazior, Thomas E. Mozzi, Robert Murguia, James E. Lattes, Analisa L. Munroe, Scott C. Huh, Jeung-Soo Papadopoulos, Haralabos C. Hartney, Mark A. Shaver, David C. Tao, Tao Wilkinson, William Dubner, Andrew D. Wagner, Alfred Thompson, Carl V. Ro, Jaesang Focused Ion Beam Fabrication Tunable Gunn Diode Light Emission From Tunable Gunn Diodes Effect of Dose Rate on Activation of Si Implanted in GaAs Focused Ion Beam Implantation of GaAs MMICs Focused Ion Beam Implantation of GaAs MESFETs Doping Gradients in GaAs MESFETs CMOS Transistors Fabricated by Focused Ion Beam Implantation CMOS Transistors Fabricated by Focused Ion Beam Lithography Charge Coupled Devices with Focused Ion Beam Implanted Doping Gradients in the Channel Focused Ion Beam Lithography Focused Ion Beam Exposure Combined With Silylation Focused Ion Beam Induced Deposition of Platinum Ion Induced Deposition of Gold, Results for the 2 to 10 keV Energy Range Ion Induced Deposition of Gold, Models for the 2 to 10 keV Energy Range Ion Induced Deposition of Gold, Results for the 50 to 100 keV Energy Range Ion Induced Deposition of Gold, Models for the 50 to 100 keV Energy Range Publications Contains reports on thirteen research projects and a list of publications. Defense Advanced Research Projects Agency/U.S. Army Research Office Contract DAAL03-88-K-0108 National Science Foundation Grant ECS 89-21728 MIT Lincoln Laboratory Innovative Research Program SEMATECH Contract 90-MC-503 Micrion Contract M08774 U.S. Army Research Office Contract DAAL03-87-K-0126 IBM Corporation 2010-07-16T04:18:15Z 2010-07-16T04:18:15Z 1990-01-01 to 1990-12-31 Technical Report RLE_PR_133_01_01s_03 http://hdl.handle.net/1721.1/57138 en Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1990 Solid State Physics, Electronics and Optics Materials and Fabrication Focused Ion Beam Fabrication Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 133 Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. application/pdf Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| spellingShingle | Focused Ion Beam Fabrication Tunable Gunn Diode Light Emission From Tunable Gunn Diodes Effect of Dose Rate on Activation of Si Implanted in GaAs Focused Ion Beam Implantation of GaAs MMICs Focused Ion Beam Implantation of GaAs MESFETs Doping Gradients in GaAs MESFETs CMOS Transistors Fabricated by Focused Ion Beam Implantation CMOS Transistors Fabricated by Focused Ion Beam Lithography Charge Coupled Devices with Focused Ion Beam Implanted Doping Gradients in the Channel Focused Ion Beam Lithography Focused Ion Beam Exposure Combined With Silylation Focused Ion Beam Induced Deposition of Platinum Ion Induced Deposition of Gold, Results for the 2 to 10 keV Energy Range Ion Induced Deposition of Gold, Models for the 2 to 10 keV Energy Range Ion Induced Deposition of Gold, Results for the 50 to 100 keV Energy Range Ion Induced Deposition of Gold, Models for the 50 to 100 keV Energy Range Publications Melngailis, John Lezec, Henri J. Musil, Christian R. Mahoney, Leonard J. Chu, Alex Chu, Larry Shepard, Mark I. Antoniadis, Dimitri A. Turner, George W. Woodhouse, John D. Liao, Kenneth S. Kazior, Thomas E. Mozzi, Robert Murguia, James E. Lattes, Analisa L. Munroe, Scott C. Huh, Jeung-Soo Papadopoulos, Haralabos C. Hartney, Mark A. Shaver, David C. Tao, Tao Wilkinson, William Dubner, Andrew D. Wagner, Alfred Thompson, Carl V. Ro, Jaesang Focused Ion Beam Fabrication |
| title | Focused Ion Beam Fabrication |
| title_full | Focused Ion Beam Fabrication |
| title_fullStr | Focused Ion Beam Fabrication |
| title_full_unstemmed | Focused Ion Beam Fabrication |
| title_short | Focused Ion Beam Fabrication |
| title_sort | focused ion beam fabrication |
| topic | Focused Ion Beam Fabrication Tunable Gunn Diode Light Emission From Tunable Gunn Diodes Effect of Dose Rate on Activation of Si Implanted in GaAs Focused Ion Beam Implantation of GaAs MMICs Focused Ion Beam Implantation of GaAs MESFETs Doping Gradients in GaAs MESFETs CMOS Transistors Fabricated by Focused Ion Beam Implantation CMOS Transistors Fabricated by Focused Ion Beam Lithography Charge Coupled Devices with Focused Ion Beam Implanted Doping Gradients in the Channel Focused Ion Beam Lithography Focused Ion Beam Exposure Combined With Silylation Focused Ion Beam Induced Deposition of Platinum Ion Induced Deposition of Gold, Results for the 2 to 10 keV Energy Range Ion Induced Deposition of Gold, Models for the 2 to 10 keV Energy Range Ion Induced Deposition of Gold, Results for the 50 to 100 keV Energy Range Ion Induced Deposition of Gold, Models for the 50 to 100 keV Energy Range Publications |
| url | http://hdl.handle.net/1721.1/57138 |
| work_keys_str_mv | AT melngailisjohn focusedionbeamfabrication AT lezechenrij focusedionbeamfabrication AT musilchristianr focusedionbeamfabrication AT mahoneyleonardj focusedionbeamfabrication AT chualex focusedionbeamfabrication AT chularry focusedionbeamfabrication AT shepardmarki focusedionbeamfabrication AT antoniadisdimitria focusedionbeamfabrication AT turnergeorgew focusedionbeamfabrication AT woodhousejohnd focusedionbeamfabrication AT liaokenneths focusedionbeamfabrication AT kaziorthomase focusedionbeamfabrication AT mozzirobert focusedionbeamfabrication AT murguiajamese focusedionbeamfabrication AT lattesanalisal focusedionbeamfabrication AT munroescottc focusedionbeamfabrication AT huhjeungsoo focusedionbeamfabrication AT papadopoulosharalabosc focusedionbeamfabrication AT hartneymarka focusedionbeamfabrication AT shaverdavidc focusedionbeamfabrication AT taotao focusedionbeamfabrication AT wilkinsonwilliam focusedionbeamfabrication AT dubnerandrewd focusedionbeamfabrication AT wagneralfred focusedionbeamfabrication AT thompsoncarlv focusedionbeamfabrication AT rojaesang focusedionbeamfabrication |