Focused Ion Beam Fabrication

Focused Ion Beam Fabrication

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Contains reports on thirteen research projects and a list of publications.

Bibliographic Details
Main Authors: Melngailis, John, Lezec, Henri J., Musil, Christian R., Mahoney, Leonard J., Chu, Alex, Chu, Larry, Shepard, Mark I., Antoniadis, Dimitri A., Turner, George W., Woodhouse, John D., Liao, Kenneth S., Kazior, Thomas E., Mozzi, Robert, Murguia, James E., Lattes, Analisa L., Munroe, Scott C., Huh, Jeung-Soo, Papadopoulos, Haralabos C., Hartney, Mark A., Shaver, David C., Tao, Tao, Wilkinson, William, Dubner, Andrew D., Wagner, Alfred, Thompson, Carl V., Ro, Jaesang
Format: Technical Report
Language:English
Published: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:
Focused Ion Beam Fabrication
Tunable Gunn Diode
Light Emission From Tunable Gunn Diodes
Effect of Dose Rate on Activation of Si Implanted in GaAs
Focused Ion Beam Implantation of GaAs MMICs
Focused Ion Beam Implantation of GaAs MESFETs
Doping Gradients in GaAs MESFETs
CMOS Transistors Fabricated by Focused Ion Beam Implantation
CMOS Transistors Fabricated by Focused Ion Beam Lithography
Charge Coupled Devices with Focused Ion Beam Implanted Doping Gradients in the Channel
Focused Ion Beam Lithography
Focused Ion Beam Exposure Combined With Silylation
Focused Ion Beam Induced Deposition of Platinum
Ion Induced Deposition of Gold, Results for the 2 to 10 keV Energy Range
Ion Induced Deposition of Gold, Models for the 2 to 10 keV Energy Range
Ion Induced Deposition of Gold, Results for the 50 to 100 keV Energy Range
Ion Induced Deposition of Gold, Models for the 50 to 100 keV Energy Range
Publications
Online Access:http://hdl.handle.net/1721.1/57138

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