High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

Contains an introduction, reports on two research projects and a list of publications and conference papers.

Bibliographic Details
Main Authors:	del Alamo, Jesus A., Bahl, Sandeep R., Azzam, Walid, Leary, Michael H., Odoardi, Angela R.
Format:	Technical Report
Language:	English
Published:	Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:	High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications Strained-channel InAIAs/n⁺ - InGaAs MIDFETs Orientation Dependence of Mismatched-Insulator InAIAs/n⁺-InGaAs MIDFETs Publications Conference Papers
Online Access:	http://hdl.handle.net/1721.1/57162

Internet

http://hdl.handle.net/1721.1/57162