High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications

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Contains an introduction, reports on two research projects and a list of publications and conference papers.

Bibliographic Details
Main Authors: del Alamo, Jesus A., Bahl, Sandeep R., Azzam, Walid, Leary, Michael H., Odoardi, Angela R.
Format: Technical Report
Language:English
Published: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:
High-Frequency InAIAs/InGaAs Metal-Insulator-Doped Semiconductor Field-Effect Transistors (MIDFETs) for Telecommunications
Strained-channel InAIAs/n⁺ - InGaAs MIDFETs
Orientation Dependence of Mismatched-Insulator InAIAs/n⁺-InGaAs MIDFETs
Publications
Conference Papers
Online Access:http://hdl.handle.net/1721.1/57162

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