Heterostructures for High Performance Devices

Heterostructures for High Performance Devices

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Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on eighteen research projects and a list of publications.

Bibliographic Details
Main Authors:	Fonstad, Clifton J., Jr., Vlcek, James C., Singer, Richard A., Burns, Geoffrey F., Failla, Anton, Shenoy, Krishna V., Mikkelson, J., Elman, B., Choi, Woo-Young, Royter, Yakov, Martin, Paul S., Haus, Hermann A., Hopps, J. H., Lee, Jae-Jin, Prasad, Sheila, Meskoob, B., Kim, Michael, Broekaert, Thomas P. E., Aggarwal, Rajni J., Smet, Jurgen H., Hu, Qing, Peng, Lung-Han, Jones, R. Victor, Ehrenrich, Victor, Hoshino, Isako, Ceyer, Sylvia T., Sawin, Herbert H.
Format:	Technical Report
Language:	English
Published:	Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:	Heterostructures for High Performance Devices Computer Controlled Growth of Lattice-Matched InGaAIAs Heterostructures on InP Molecular Beam Epitaxy of InGaAIAs Strained-Layer Heterostructures on 111 GaAs Molecular Beam Epitaxy of InGaAIAs Strained-Layer Heterostructures on InP Monolithic Fabrication of Strain-free GaAIAs Laser Diodes on Silicon Substrates Integration of Vertical Cavity Surface Emitting Lasers on GaAs Integrated Circuits Low Temperature Growth of GaAIAs Laser Diodes MBE-Grown InGaAIAs/InP Long-Wavelength Laser Diodes for Narrow Linewidth Applications New Three-Terminal Independently Addressable Asymmetric Laser Diodes (IAADQW-LD) with Dynamic Control of Gain and Refractive Index Design of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy Fabrication of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy Laser Diode Modeling for Narrow Linewidth Operation Laser Diode Design for Narrow Linewidth Operation Growth of Improved InGaAIAs/InP Heterojunction Bipolar Transistors Processing of Improved InGaAIAs/InP Heterojunction Bipolar Transistors Microwave Characterization of Emitter-Down Heterojunction Bipolar Transistors Microwave Analysis of Emitter-Down Heterojunction Bipolar Transistors Microwave Modeling of Emitter-Down Heterojunction Bipolar Transistors Analysis of Three-Terminal n-n-n Quantum Well Base, Tunnel-Barrier Transistors Applications of AlAs Etch-Stop Layers in InGaAIAs/InP Heterostructure Electronics Applications of AlAs Etch-Stop Layers in InGaAIAs/InP Heterostructure Optoelectronics Electrical Transport Studies in Directly Contacted InGaAs Quantum Wells Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum Well Heterostructures Investigation of Intersubband Relaxation Times in InGaAIAs Quantum Well Heterostructures Infrared Characterization of InGaAs/AIAs/InP Quantum Well Heterostructures Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams
Online Access:	http://hdl.handle.net/1721.1/57191

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http://hdl.handle.net/1721.1/57191