Heterostructures for High Performance Devices
Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on eighteen research projects and a list of publications.
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| Format: | Technical Report |
| Language: | English |
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Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT)
2010
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| Online Access: | http://hdl.handle.net/1721.1/57191 |
| _version_ | 1811081605731581952 |
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| author | Fonstad, Clifton J., Jr. Vlcek, James C. Singer, Richard A. Burns, Geoffrey F. Failla, Anton Shenoy, Krishna V. Mikkelson, J. Elman, B. Choi, Woo-Young Royter, Yakov Martin, Paul S. Haus, Hermann A. Hopps, J. H. Lee, Jae-Jin Prasad, Sheila Meskoob, B. Kim, Michael Broekaert, Thomas P. E. Aggarwal, Rajni J. Smet, Jurgen H. Hu, Qing Peng, Lung-Han Jones, R. Victor Ehrenrich, Victor Hoshino, Isako Ceyer, Sylvia T. Sawin, Herbert H. |
| author_facet | Fonstad, Clifton J., Jr. Vlcek, James C. Singer, Richard A. Burns, Geoffrey F. Failla, Anton Shenoy, Krishna V. Mikkelson, J. Elman, B. Choi, Woo-Young Royter, Yakov Martin, Paul S. Haus, Hermann A. Hopps, J. H. Lee, Jae-Jin Prasad, Sheila Meskoob, B. Kim, Michael Broekaert, Thomas P. E. Aggarwal, Rajni J. Smet, Jurgen H. Hu, Qing Peng, Lung-Han Jones, R. Victor Ehrenrich, Victor Hoshino, Isako Ceyer, Sylvia T. Sawin, Herbert H. |
| author_sort | Fonstad, Clifton J., Jr. |
| collection | MIT |
| description | Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on eighteen research projects and a list of publications. |
| first_indexed | 2024-09-23T11:49:02Z |
| format | Technical Report |
| id | mit-1721.1/57191 |
| institution | Massachusetts Institute of Technology |
| language | English |
| last_indexed | 2024-09-23T11:49:02Z |
| publishDate | 2010 |
| publisher | Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| record_format | dspace |
| spelling | mit-1721.1/571912019-04-10T10:24:30Z Heterostructures for High Performance Devices Fonstad, Clifton J., Jr. Vlcek, James C. Singer, Richard A. Burns, Geoffrey F. Failla, Anton Shenoy, Krishna V. Mikkelson, J. Elman, B. Choi, Woo-Young Royter, Yakov Martin, Paul S. Haus, Hermann A. Hopps, J. H. Lee, Jae-Jin Prasad, Sheila Meskoob, B. Kim, Michael Broekaert, Thomas P. E. Aggarwal, Rajni J. Smet, Jurgen H. Hu, Qing Peng, Lung-Han Jones, R. Victor Ehrenrich, Victor Hoshino, Isako Ceyer, Sylvia T. Sawin, Herbert H. Heterostructures for High Performance Devices Computer Controlled Growth of Lattice-Matched InGaAIAs Heterostructures on InP Molecular Beam Epitaxy of InGaAIAs Strained-Layer Heterostructures on 111 GaAs Molecular Beam Epitaxy of InGaAIAs Strained-Layer Heterostructures on InP Monolithic Fabrication of Strain-free GaAIAs Laser Diodes on Silicon Substrates Integration of Vertical Cavity Surface Emitting Lasers on GaAs Integrated Circuits Low Temperature Growth of GaAIAs Laser Diodes MBE-Grown InGaAIAs/InP Long-Wavelength Laser Diodes for Narrow Linewidth Applications New Three-Terminal Independently Addressable Asymmetric Laser Diodes (IAADQW-LD) with Dynamic Control of Gain and Refractive Index Design of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy Fabrication of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy Laser Diode Modeling for Narrow Linewidth Operation Laser Diode Design for Narrow Linewidth Operation Growth of Improved InGaAIAs/InP Heterojunction Bipolar Transistors Processing of Improved InGaAIAs/InP Heterojunction Bipolar Transistors Microwave Characterization of Emitter-Down Heterojunction Bipolar Transistors Microwave Analysis of Emitter-Down Heterojunction Bipolar Transistors Microwave Modeling of Emitter-Down Heterojunction Bipolar Transistors Analysis of Three-Terminal n-n-n Quantum Well Base, Tunnel-Barrier Transistors Applications of AlAs Etch-Stop Layers in InGaAIAs/InP Heterostructure Electronics Applications of AlAs Etch-Stop Layers in InGaAIAs/InP Heterostructure Optoelectronics Electrical Transport Studies in Directly Contacted InGaAs Quantum Wells Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum Well Heterostructures Investigation of Intersubband Relaxation Times in InGaAIAs Quantum Well Heterostructures Infrared Characterization of InGaAs/AIAs/InP Quantum Well Heterostructures Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams Contains table of contents for Part I, table of contents for Section 1, an introduction, reports on eighteen research projects and a list of publications. Charles S. Draper Laboratories Contract DL-H-418483 DARPA/NCIPT Joint Services Electronics Program Contract DAAL03-89-C-0001 Joint Services Electronics Program Contract DAAL03-92-C-0001 IBM Corporation Fellowship National Science Foundation Fellowship Vitesse Semiconductor GTE Laboratories Charles S. Draper Laboratories Electronics and Telecommunications Research Institute (ETRI) Fellowship National Science Foundation/Northeastern University TRW Systems U.S. Army Research Office National Science Foundation AT&T Bell Laboratories Fellowship National Science Foundation Grant ECS 90-07745 2010-07-16T04:31:00Z 2010-07-16T04:31:00Z 1991-01-01 to 1991-12-31 Technical Report RLE_PR_134_01_01s_01 http://hdl.handle.net/1721.1/57191 en Massachusetts Institute of Technology, Research Laboratory of Electronics, Progress Report, January 1 - December 31, 1991 Solid State Physics, Electronics and Optics Materials and Fabrication Heterostructures for High Performance Devices Massachusetts Institute of Technology. Research Laboratory of Electronics. Progress Report, no. 134 Copyright (c) 2008 by the Massachusetts Institute of Technology. All rights reserved. application/pdf Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) |
| spellingShingle | Heterostructures for High Performance Devices Computer Controlled Growth of Lattice-Matched InGaAIAs Heterostructures on InP Molecular Beam Epitaxy of InGaAIAs Strained-Layer Heterostructures on 111 GaAs Molecular Beam Epitaxy of InGaAIAs Strained-Layer Heterostructures on InP Monolithic Fabrication of Strain-free GaAIAs Laser Diodes on Silicon Substrates Integration of Vertical Cavity Surface Emitting Lasers on GaAs Integrated Circuits Low Temperature Growth of GaAIAs Laser Diodes MBE-Grown InGaAIAs/InP Long-Wavelength Laser Diodes for Narrow Linewidth Applications New Three-Terminal Independently Addressable Asymmetric Laser Diodes (IAADQW-LD) with Dynamic Control of Gain and Refractive Index Design of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy Fabrication of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy Laser Diode Modeling for Narrow Linewidth Operation Laser Diode Design for Narrow Linewidth Operation Growth of Improved InGaAIAs/InP Heterojunction Bipolar Transistors Processing of Improved InGaAIAs/InP Heterojunction Bipolar Transistors Microwave Characterization of Emitter-Down Heterojunction Bipolar Transistors Microwave Analysis of Emitter-Down Heterojunction Bipolar Transistors Microwave Modeling of Emitter-Down Heterojunction Bipolar Transistors Analysis of Three-Terminal n-n-n Quantum Well Base, Tunnel-Barrier Transistors Applications of AlAs Etch-Stop Layers in InGaAIAs/InP Heterostructure Electronics Applications of AlAs Etch-Stop Layers in InGaAIAs/InP Heterostructure Optoelectronics Electrical Transport Studies in Directly Contacted InGaAs Quantum Wells Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum Well Heterostructures Investigation of Intersubband Relaxation Times in InGaAIAs Quantum Well Heterostructures Infrared Characterization of InGaAs/AIAs/InP Quantum Well Heterostructures Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams Fonstad, Clifton J., Jr. Vlcek, James C. Singer, Richard A. Burns, Geoffrey F. Failla, Anton Shenoy, Krishna V. Mikkelson, J. Elman, B. Choi, Woo-Young Royter, Yakov Martin, Paul S. Haus, Hermann A. Hopps, J. H. Lee, Jae-Jin Prasad, Sheila Meskoob, B. Kim, Michael Broekaert, Thomas P. E. Aggarwal, Rajni J. Smet, Jurgen H. Hu, Qing Peng, Lung-Han Jones, R. Victor Ehrenrich, Victor Hoshino, Isako Ceyer, Sylvia T. Sawin, Herbert H. Heterostructures for High Performance Devices |
| title | Heterostructures for High Performance Devices |
| title_full | Heterostructures for High Performance Devices |
| title_fullStr | Heterostructures for High Performance Devices |
| title_full_unstemmed | Heterostructures for High Performance Devices |
| title_short | Heterostructures for High Performance Devices |
| title_sort | heterostructures for high performance devices |
| topic | Heterostructures for High Performance Devices Computer Controlled Growth of Lattice-Matched InGaAIAs Heterostructures on InP Molecular Beam Epitaxy of InGaAIAs Strained-Layer Heterostructures on 111 GaAs Molecular Beam Epitaxy of InGaAIAs Strained-Layer Heterostructures on InP Monolithic Fabrication of Strain-free GaAIAs Laser Diodes on Silicon Substrates Integration of Vertical Cavity Surface Emitting Lasers on GaAs Integrated Circuits Low Temperature Growth of GaAIAs Laser Diodes MBE-Grown InGaAIAs/InP Long-Wavelength Laser Diodes for Narrow Linewidth Applications New Three-Terminal Independently Addressable Asymmetric Laser Diodes (IAADQW-LD) with Dynamic Control of Gain and Refractive Index Design of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy Fabrication of Distributed Feedback (DFB) InGaAIAs Laser Diodes Grown by Molecular Beam Epitaxy Laser Diode Modeling for Narrow Linewidth Operation Laser Diode Design for Narrow Linewidth Operation Growth of Improved InGaAIAs/InP Heterojunction Bipolar Transistors Processing of Improved InGaAIAs/InP Heterojunction Bipolar Transistors Microwave Characterization of Emitter-Down Heterojunction Bipolar Transistors Microwave Analysis of Emitter-Down Heterojunction Bipolar Transistors Microwave Modeling of Emitter-Down Heterojunction Bipolar Transistors Analysis of Three-Terminal n-n-n Quantum Well Base, Tunnel-Barrier Transistors Applications of AlAs Etch-Stop Layers in InGaAIAs/InP Heterostructure Electronics Applications of AlAs Etch-Stop Layers in InGaAIAs/InP Heterostructure Optoelectronics Electrical Transport Studies in Directly Contacted InGaAs Quantum Wells Investigation of Infrared Intersubband Emission from InGaAs/AIAs/InP Quantum Well Heterostructures Investigation of Intersubband Relaxation Times in InGaAIAs Quantum Well Heterostructures Infrared Characterization of InGaAs/AIAs/InP Quantum Well Heterostructures Damage-Free In-Situ UHV Etching of III-V Heterostructures Using Molecular Beams Damage-Free In-Situ UHV Cleaning of III-V Heterostructures Using Molecular Beams |
| url | http://hdl.handle.net/1721.1/57191 |
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