Gas Source Molecular Beam Epitaxy of Compound Semiconductors

Contains an introduction and reports on six research projects.

Bibliographic Details
Main Authors:	Kolodziejski, Leslie A., Mnushkina, Irina, Petrich, Gale S., Coronado, Christopher A., Fisher, Philip A., Ho, Easen, House, Jody L., Geraci, James R., Lim, Kuo-Yi, Lu, Kan, Haus, Hermann A., Smith, Henry I., Damask, Jay N., Fonstad, Clifton G., Jr., Ahadian, Joseph F., Thompson, Carl V., Donovan, Sean M.
Format:	Technical Report
Language:	English
Published:	Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:	Gas Source Molecular Beam Epitaxy of Compound Semiconductors Gas Source Molecular Beam Epitaxy of ZnSe Gas Source Molecular Beam Epitaxy of ZnSe:CI Gas Source Molecular Beam Epitaxy of ZnSe:N Novel Epitaxial III-V Buffer Layers for Wide Bandgap II-VI Visible Sources Integrated Photonic Devices The Channel-Dropping Filter Heterovalent Interfaces Composed of II-VI/II-V Heterostructures Optoelectronic Very Large Scale Integrated Circuits Heteroepitaxy of GaAs onto Corrugated Surfaces of Si
Online Access:	http://hdl.handle.net/1721.1/57270

Internet

http://hdl.handle.net/1721.1/57270