Gas Source Molecular Beam Epitaxy of Compound Semiconductors

Contains an introduction and reports on seven research projects.

Bibliographic Details
Main Authors:	Kolodziejski, Leslie A., Petrich, Gale S., Ho, Easen, House, Jody L., Warlick, Emily L., Lopatnikova, Anna, Ippen, Erich P., Dougherty, David J., Fonstad, Clifton G., Jr., Ahadian, Joseph F., Patterson, Steven G., Shenoy, Krishna V., Hall, Katherine L., Donnelly, Joseph P., Marley, Elisabeth A., Milikow, Jeremy M., Haus, Hermann A., Smith, Henry I., Damask, Jay N., Joannopoulos, John D., Reif, L. Rafael, Villeneuve, Pierre R., Lim, Kuo-Yi, Fan, Shanhui, Chen, Jerry C., Tang, Xiao-feng
Format:	Technical Report
Language:	English
Published:	Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:	Gas Source Molecular Beam Epitaxy of Compound Semiconductors Gas Source Molecular Beam Epitaxy of ZnSe Gas Source Molecular Beam Epitaxy of ZnSe:CI Gas Source Molecular Beam Epitaxy of ZnSe:N Novel Epitaxial III-V Buffer Layers for Wide Bandgap II-VI Visible Sources Growth of ZnSe/GaAs Heterostructures Characterization of ZnSe/GaAs Heterostructures Low Temperature Growth of (In,Ga)P/(In,Ga)As Lasers for Optoelectronic-VLSI Low Temperature Growth of (In,Ga)P/(In,Ga)As LEDs for Optoelectronic-VLSI InP-Based Devices for Optical Communication Networks Integrated Optical Circuits in InP Photonic Bandgap Structures
Online Access:	http://hdl.handle.net/1721.1/57322

Internet

http://hdl.handle.net/1721.1/57322