Gas Source Molecular Beam Epitaxy of Compound Semiconductors

Gas Source Molecular Beam Epitaxy of Compound Semiconductors

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Contains an introduction and reports on seven research projects.

Bibliographic Details
Main Authors: Kolodziejski, Leslie A., Petrich, Gale S., Ho, Easen, House, Jody L., Warlick, Emily L., Lopatnikova, Anna, Ippen, Erich P., Dougherty, David J., Fonstad, Clifton G., Jr., Ahadian, Joseph F., Patterson, Steven G., Shenoy, Krishna V., Hall, Katherine L., Donnelly, Joseph P., Marley, Elisabeth A., Milikow, Jeremy M., Haus, Hermann A., Smith, Henry I., Damask, Jay N., Joannopoulos, John D., Reif, L. Rafael, Villeneuve, Pierre R., Lim, Kuo-Yi, Fan, Shanhui, Chen, Jerry C., Tang, Xiao-feng
Format: Technical Report
Language:English
Published: Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:
Gas Source Molecular Beam Epitaxy of Compound Semiconductors
Gas Source Molecular Beam Epitaxy of ZnSe
Gas Source Molecular Beam Epitaxy of ZnSe:CI
Gas Source Molecular Beam Epitaxy of ZnSe:N
Novel Epitaxial III-V Buffer Layers for Wide Bandgap II-VI Visible Sources
Growth of ZnSe/GaAs Heterostructures
Characterization of ZnSe/GaAs Heterostructures
Low Temperature Growth of (In,Ga)P/(In,Ga)As Lasers for Optoelectronic-VLSI
Low Temperature Growth of (In,Ga)P/(In,Ga)As LEDs for Optoelectronic-VLSI
InP-Based Devices for Optical Communication Networks
Integrated Optical Circuits in InP
Photonic Bandgap Structures
Online Access:http://hdl.handle.net/1721.1/57322

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