Epitaxial Growth and Processing of Compound Semiconductors

Contains an introduction and reports on six research projects.

Bibliographic Details
Main Authors:	Kolodziejski, Leslie A., Petrich, Gale S., House, Jody L., Warlick, Emily L., Ippen, Erich P., Dougherty, David J., Fonstad, Clifton G., Jr., Prasad, Sheila, Ahadian, Joseph F., Patterson, Steven G., Viadyananthan, Praveen T., Hall, Katherine L., Smith, Henry I., Goorsky, Mark S., Koontz, Elisabeth M., Lim, Michael H. Y., Milikow, Jeremy M., Dahleh, Munther A., Warnick, Sean, Joannopoulos, John D., Reif, L. Rafael, Villeneuve, Pierre R., Steinmeyer, Günter, Lim, Kuo-Yi, Fan, Shanhui, Tziligakis, Constantine N., Qi, Minghao, Tang, Xiao-Feng
Format:	Technical Report
Language:	English
Published:	Research Laboratory of Electronics (RLE) at the Massachusetts Institute of Technology (MIT) 2010
Subjects:	Epitaxial Growth of Compound Semiconductors Epitaxial Processing of Compound Semiconductors Reducing the Defect Density in MBE-ZnSe/III-V Heterostructures Microstructural Analysis of ZnSe/GaAs Heterostructures Growth of (In,Ga)P/GaAs LEDs for Optoelectronic-VLSI InP-Based Devices for Optical Communication Networks (In,Ga)(As,P) Composition Control (In,Ga)(As,P) Composition Characterization Photonic Bandgap Structures
Online Access:	http://hdl.handle.net/1721.1/57370

Internet

http://hdl.handle.net/1721.1/57370