High mobility germanium MOSFETs : study of ozone surface passivation and n-type Dopant channel implants combined with ALD dielectrics

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.

Bibliographic Details
Main Author:	Hennessy, John, 1980-
Other Authors:	Dimitri A. Antoniadis.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2010
Subjects:	Electrical Engineering and Computer Science.
Online Access:	http://hdl.handle.net/1721.1/58174

Internet

http://hdl.handle.net/1721.1/58174