High mobility germanium MOSFETs : study of ozone surface passivation and n-type Dopant channel implants combined with ALD dielectrics

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.

ग्रंथसूची विवरण
मुख्य लेखक: Hennessy, John, 1980-
अन्य लेखक: Dimitri A. Antoniadis.
स्वरूप: थीसिस
भाषा:eng
प्रकाशित: Massachusetts Institute of Technology 2010
विषय:
ऑनलाइन पहुंच:http://hdl.handle.net/1721.1/58174