High mobility germanium MOSFETs : study of ozone surface passivation and n-type Dopant channel implants combined with ALD dielectrics

समान संसाधन

• High electron mobility germanium MOSFETs: Effect of n-type channel implants and ozone surface passivation
  द्वारा: Hennessy, J., और अन्य
  प्रकाशित: (2010)
• Dopant profile model in a shallow germanium n+/p junction
  द्वारा: Baek, Jung Woo, और अन्य
  प्रकाशित: (2014)
• Silicon-Germanium interdiffusion and its impacts on enhanced mobility MOSFETs
  द्वारा: Xia, Guangrui, 1976-
  प्रकाशित: (2007)
• Surface Passivation and Antireflection Behavior of ALD on n-Type Silicon for Solar Cells
  द्वारा: Ing-Song Yu, और अन्य
  प्रकाशित: (2013-01-01)
• High phosphorous doped germanium: Dopant diffusion and modeling
  द्वारा: Cai, Yan, और अन्य
  प्रकाशित: (2013)