High mobility germanium MOSFETs : study of ozone surface passivation and n-type Dopant channel implants combined with ALD dielectrics
Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.
मुख्य लेखक: | |
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अन्य लेखक: | |
स्वरूप: | थीसिस |
भाषा: | eng |
प्रकाशित: |
Massachusetts Institute of Technology
2010
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विषय: | |
ऑनलाइन पहुंच: | http://hdl.handle.net/1721.1/58174 |