High mobility germanium MOSFETs : study of ozone surface passivation and n-type Dopant channel implants combined with ALD dielectrics

High mobility germanium MOSFETs : study of ozone surface passivation and n-type Dopant channel implants combined with ALD dielectrics

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.

Bibliographic Details
Main Author: Hennessy, John, 1980-
Other Authors: Dimitri A. Antoniadis.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2010
Subjects:
Electrical Engineering and Computer Science.
Online Access:http://hdl.handle.net/1721.1/58174
Description
Summary:Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.

Similar Items