Si[subscript C]C[subscript Si] antisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching

Si[subscript C]C[subscript Si] antisite pairs in SiC identified as paramagnetic defects with strongly anisotropic orbital quenching

The nearest-neighbor antisite pair defects in 4H-SiC, 6H-SiC, and 3C-SiC single crystals have been identified using electron paramagnetic resonance spectroscopy in combination with a nonperturbative ab initio scheme for the electronic g tensor. Based on the theoretical predictions, the positively c...

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Bibliographic Details
Main Authors: Ceresoli, Davide, Gerstmann, Uwe, Seitsonen, A. P., Mauri, Francesco, von Bardeleben, H. J., Cantin, J. L., Garcia Lopez, J.
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Physical Society 2010
Online Access:http://hdl.handle.net/1721.1/58696
https://orcid.org/0000-0002-9831-0773

Internet

http://hdl.handle.net/1721.1/58696
https://orcid.org/0000-0002-9831-0773

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