Conductance in Co/Al[subscript 2]O[subscript 3]/Si/Al[subscript 2]O[subscript 3] permalloy with asymmetrically doped barrier
We report on dependence of conductance and tunnelling magnetoresistance on bias voltage at different temperatures down to 2 K in Co|Al[subscript 2]O[subscript 3](10 Å)|Si(δ)|Al[subscript 2]O[subscript 3](2 Å)|Permalloy magnetic tunnel junctions. Complementary low frequency noise measurements are us...
| Principais autores: | , , , , , , |
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| Outros Autores: | |
| Formato: | Artigo |
| Idioma: | en_US |
| Publicado em: |
American Physical Society
2010
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| Acesso em linha: | http://hdl.handle.net/1721.1/58851 https://orcid.org/0000-0002-2480-1211 |