Conductance in Co/Al[subscript 2]O[subscript 3]/Si/Al[subscript 2]O[subscript 3] permalloy with asymmetrically doped barrier
We report on dependence of conductance and tunnelling magnetoresistance on bias voltage at different temperatures down to 2 K in Co|Al[subscript 2]O[subscript 3](10 Å)|Si(δ)|Al[subscript 2]O[subscript 3](2 Å)|Permalloy magnetic tunnel junctions. Complementary low frequency noise measurements are us...
Main Authors: | , , , , , , |
---|---|
Other Authors: | |
Format: | Article |
Language: | en_US |
Published: |
American Physical Society
2010
|
Online Access: | http://hdl.handle.net/1721.1/58851 https://orcid.org/0000-0002-2480-1211 |