Conductance in Co/Al[subscript 2]O[subscript 3]/Si/Al[subscript 2]O[subscript 3] permalloy with asymmetrically doped barrier

Conductance in Co/Al[subscript 2]O[subscript 3]/Si/Al[subscript 2]O[subscript 3] permalloy with asymmetrically doped barrier

We report on dependence of conductance and tunnelling magnetoresistance on bias voltage at different temperatures down to 2 K in Co|Al[subscript 2]O[subscript 3](10 Å)|Si(δ)|Al[subscript 2]O[subscript 3](2 Å)|Permalloy magnetic tunnel junctions. Complementary low frequency noise measurements are us...

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Bibliographic Details
Main Authors:	Guerrero, R., Aliev, F. G., Villar, R., Santos, Tiffany S., Moodera, Jagadeesh, Dugaev, V. K., Barnas, J.
Other Authors:	Francis Bitter Magnet Laboratory (Massachusetts Institute of Technology)
Format:	Article
Language:	en_US
Published:	American Physical Society 2010
Online Access:	http://hdl.handle.net/1721.1/58851 https://orcid.org/0000-0002-2480-1211

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