Fabrication and process characterization of atom transistor chips

Fabrication and process characterization of atom transistor chips

This paper describes the design and fabrication of an atom chip for atom tunneling experiments. A fabrication process was developed that uses a combination of UV-optical and Electron-Beam lithography to pattern micrometer and nanometer scale copper wires on a single chip. The minimum wire width fabr...

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Xehetasun bibliografikoak
Egile Nagusiak: Bright, V. M., Anderson, D. Z., Salim, E. A., Chuang, H. C., Vuletic, Vladan
Beste egile batzuk: Massachusetts Institute of Technology. Department of Physics
Formatua: Artikulua
Hizkuntza:en_US
Argitaratua: Institute of Electrical and Electronics Engineers 2010
Gaiak:
Atom Chips
Atom Transistor
Atom Tunneling
Bose-Einstein Condensation (BEC)
E-Beam Lithography
Suspended Nanowires
Sarrera elektronikoa:http://hdl.handle.net/1721.1/58962
https://orcid.org/0000-0002-9786-0538

Internet

http://hdl.handle.net/1721.1/58962
https://orcid.org/0000-0002-9786-0538

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