Fabrication and process characterization of atom transistor chips
This paper describes the design and fabrication of an atom chip for atom tunneling experiments. A fabrication process was developed that uses a combination of UV-optical and Electron-Beam lithography to pattern micrometer and nanometer scale copper wires on a single chip. The minimum wire width fabr...
| Main Authors: | , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers
2010
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| Subjects: | |
| Online Access: | http://hdl.handle.net/1721.1/58962 https://orcid.org/0000-0002-9786-0538 |
| Summary: | This paper describes the design and fabrication of an atom chip for atom tunneling experiments. A fabrication process was developed that uses a combination of UV-optical and Electron-Beam lithography to pattern micrometer and nanometer scale copper wires on a single chip. The minimum wire width fabricated in this work is 200 nm. The wires can carry current densities of more than 7.5times10[superscript 7] A/cm[superscript 2]. The electrical current tests establish the feasibility of realizing chip-based atom tunneling experiments. |
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