Fabrication and process characterization of atom transistor chips

This paper describes the design and fabrication of an atom chip for atom tunneling experiments. A fabrication process was developed that uses a combination of UV-optical and Electron-Beam lithography to pattern micrometer and nanometer scale copper wires on a single chip. The minimum wire width fabr...

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Main Authors: Bright, V. M., Anderson, D. Z., Salim, E. A., Chuang, H. C., Vuletic, Vladan
Other Authors: Massachusetts Institute of Technology. Department of Physics
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Subjects:
Online Access:http://hdl.handle.net/1721.1/58962
https://orcid.org/0000-0002-9786-0538
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author Bright, V. M.
Anderson, D. Z.
Salim, E. A.
Chuang, H. C.
Vuletic, Vladan
author2 Massachusetts Institute of Technology. Department of Physics
author_facet Massachusetts Institute of Technology. Department of Physics
Bright, V. M.
Anderson, D. Z.
Salim, E. A.
Chuang, H. C.
Vuletic, Vladan
author_sort Bright, V. M.
collection MIT
description This paper describes the design and fabrication of an atom chip for atom tunneling experiments. A fabrication process was developed that uses a combination of UV-optical and Electron-Beam lithography to pattern micrometer and nanometer scale copper wires on a single chip. The minimum wire width fabricated in this work is 200 nm. The wires can carry current densities of more than 7.5times10[superscript 7] A/cm[superscript 2]. The electrical current tests establish the feasibility of realizing chip-based atom tunneling experiments.
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spelling mit-1721.1/589622022-09-26T12:45:34Z Fabrication and process characterization of atom transistor chips Bright, V. M. Anderson, D. Z. Salim, E. A. Chuang, H. C. Vuletic, Vladan Massachusetts Institute of Technology. Department of Physics MIT-Harvard Center for Ultracold Atoms Vuletic, Vladan Vuletic, Vladan Atom Chips Atom Transistor Atom Tunneling Bose-Einstein Condensation (BEC) E-Beam Lithography Suspended Nanowires This paper describes the design and fabrication of an atom chip for atom tunneling experiments. A fabrication process was developed that uses a combination of UV-optical and Electron-Beam lithography to pattern micrometer and nanometer scale copper wires on a single chip. The minimum wire width fabricated in this work is 200 nm. The wires can carry current densities of more than 7.5times10[superscript 7] A/cm[superscript 2]. The electrical current tests establish the feasibility of realizing chip-based atom tunneling experiments. 2010-10-08T14:19:00Z 2010-10-08T14:19:00Z 2009-10 Article http://purl.org/eprint/type/JournalArticle 978-1-4244-4190-7 978-1-4244-4193-8 INSPEC Accession Number: 10917191 http://hdl.handle.net/1721.1/58962 Chuang, H.C. et al. “Fabrication and process characterization of atom transistor chips.” Solid-State Sensors, Actuators and Microsystems Conference, 2009. TRANSDUCERS 2009. International. 2009. 1305-1308. © 2009 IEEE https://orcid.org/0000-0002-9786-0538 en_US http://dx.doi.org/10.1109/SENSOR.2009.5285870 Proceedings of the Solid-State Sensors, Actuators and Microsystems Conference, 2009 Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE
spellingShingle Atom Chips
Atom Transistor
Atom Tunneling
Bose-Einstein Condensation (BEC)
E-Beam Lithography
Suspended Nanowires
Bright, V. M.
Anderson, D. Z.
Salim, E. A.
Chuang, H. C.
Vuletic, Vladan
Fabrication and process characterization of atom transistor chips
title Fabrication and process characterization of atom transistor chips
title_full Fabrication and process characterization of atom transistor chips
title_fullStr Fabrication and process characterization of atom transistor chips
title_full_unstemmed Fabrication and process characterization of atom transistor chips
title_short Fabrication and process characterization of atom transistor chips
title_sort fabrication and process characterization of atom transistor chips
topic Atom Chips
Atom Transistor
Atom Tunneling
Bose-Einstein Condensation (BEC)
E-Beam Lithography
Suspended Nanowires
url http://hdl.handle.net/1721.1/58962
https://orcid.org/0000-0002-9786-0538
work_keys_str_mv AT brightvm fabricationandprocesscharacterizationofatomtransistorchips
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AT vuleticvladan fabricationandprocesscharacterizationofatomtransistorchips