Seamless On-wafer integration of GaN HEMTs and Si(100) MOSFETs

The integration of III-V compound semiconductors and silicon (100) CMOS technologies has been a long pursued goal. A robust low-cost heterogeneous integration technology would make the outstanding analog and mixed-signal performance of compound semiconductor electronics available on an as-needed bas...

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Bibliographic Details
Main Authors: Palacios, Tomas, Piner, E. L., Lee, J., Chung, J. W.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Online Access:http://hdl.handle.net/1721.1/58968
https://orcid.org/0000-0002-2190-563X