Seamless On-wafer integration of GaN HEMTs and Si(100) MOSFETs
The integration of III-V compound semiconductors and silicon (100) CMOS technologies has been a long pursued goal. A robust low-cost heterogeneous integration technology would make the outstanding analog and mixed-signal performance of compound semiconductor electronics available on an as-needed bas...
Main Authors: | Palacios, Tomas, Piner, E. L., Lee, J., Chung, J. W. |
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Other Authors: | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
Format: | Article |
Language: | en_US |
Published: |
Institute of Electrical and Electronics Engineers
2010
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Online Access: | http://hdl.handle.net/1721.1/58968 https://orcid.org/0000-0002-2190-563X |
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