Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies

Temperature Dependence of Digital Single-Event Transients in Bulk and Fully-Depleted SOI Technologies

Factors that affect single-event transient pulse widths, such as drift, diffusion, and parasitic bipolar transistor parameters, are also strong functions of operating temperature. In this paper, SET pulse-width measurements are performed over a wide temperature range in both bulk and fully-depleted...

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Bibliographic Details
Main Authors: Gouker, Pascale M., Gadlage, Matthew J., Ahlbin, Jonathan R., Ramachandra, Vishwanath, Dinkin, Cody A., Bhuva, Bharat L., Narasimham, Balaji, Schrimpf, Ronald D., McCurdy, Michael W., Alles, Michael L., Reed, Robert A., Mendenhall, Marcus H., Massengill, Lloyd W., Shuler, Robert L., McMorrow, Dale
Other Authors: Lincoln Laboratory
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Subjects:
Heavy ions
ion radiation effects
silicon-on-insulator technology
single event transients
single event upset (SEU)
Online Access:http://hdl.handle.net/1721.1/59317

Internet

http://hdl.handle.net/1721.1/59317

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