Radiation effects in MIT Lincoln Lab 3DIC technology

Radiation effects in MIT Lincoln Lab 3DIC technology

We characterized TID effects in MITLL 3DIC technology. We found that the effects were comparable for nFETs on the bottom tier with that on single tier wafers. Less positive charge build-up is observed for wide nFETs on the upper tiers, and this is due to the absence of silicon below the BOX. Other r...

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Bibliographic Details
Main Authors: Gouker, Pascale M., Wyatt, Peter W., Yost, Donna-Ruth W., Chen, Chenson K., Chen, Chang-Lee, Knecht, Jeffrey M., Keast, Craig L.
Other Authors: Lincoln Laboratory
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Online Access:http://hdl.handle.net/1721.1/59350

Internet

http://hdl.handle.net/1721.1/59350

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