Radiation effects in MIT Lincoln Lab 3DIC technology
We characterized TID effects in MITLL 3DIC technology. We found that the effects were comparable for nFETs on the bottom tier with that on single tier wafers. Less positive charge build-up is observed for wide nFETs on the upper tiers, and this is due to the absence of silicon below the BOX. Other r...
Full description
Bibliographic Details
| Main Authors: |
Gouker, Pascale M.,
Wyatt, Peter W.,
Yost, Donna-Ruth W.,
Chen, Chenson K.,
Chen, Chang-Lee,
Knecht, Jeffrey M.,
Keast, Craig L. |
|---|
| Other Authors: |
Lincoln Laboratory |
|---|
| Format: | Article
|
|---|
| Language: | en_US |
|---|
| Published: |
Institute of Electrical and Electronics Engineers
2010
|
|---|
| Online Access: | http://hdl.handle.net/1721.1/59350
|
|---|