Radiation effects in MIT Lincoln Lab 3DIC technology
We characterized TID effects in MITLL 3DIC technology. We found that the effects were comparable for nFETs on the bottom tier with that on single tier wafers. Less positive charge build-up is observed for wide nFETs on the upper tiers, and this is due to the absence of silicon below the BOX. Other r...
| Main Authors: | , , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/59350 |
| _version_ | 1826205423913402368 |
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| author | Gouker, Pascale M. Wyatt, Peter W. Yost, Donna-Ruth W. Chen, Chenson K. Chen, Chang-Lee Knecht, Jeffrey M. Keast, Craig L. |
| author2 | Lincoln Laboratory |
| author_facet | Lincoln Laboratory Gouker, Pascale M. Wyatt, Peter W. Yost, Donna-Ruth W. Chen, Chenson K. Chen, Chang-Lee Knecht, Jeffrey M. Keast, Craig L. |
| author_sort | Gouker, Pascale M. |
| collection | MIT |
| description | We characterized TID effects in MITLL 3DIC technology. We found that the effects were comparable for nFETs on the bottom tier with that on single tier wafers. Less positive charge build-up is observed for wide nFETs on the upper tiers, and this is due to the absence of silicon below the BOX. Other results indicate that MITLL 3DIC technology can be hardened to ionizing radiation by modifying the BOX. |
| first_indexed | 2024-09-23T13:12:55Z |
| format | Article |
| id | mit-1721.1/59350 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T13:12:55Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/593502022-10-01T13:47:17Z Radiation effects in MIT Lincoln Lab 3DIC technology Gouker, Pascale M. Wyatt, Peter W. Yost, Donna-Ruth W. Chen, Chenson K. Chen, Chang-Lee Knecht, Jeffrey M. Keast, Craig L. Lincoln Laboratory Gouker, Pascale M. Gouker, Pascale M. Wyatt, Peter W. Yost, Donna-Ruth W. Chen, Chenson K. Chen, Chang-Lee Knecht, Jeffrey M. Keast, Craig L. We characterized TID effects in MITLL 3DIC technology. We found that the effects were comparable for nFETs on the bottom tier with that on single tier wafers. Less positive charge build-up is observed for wide nFETs on the upper tiers, and this is due to the absence of silicon below the BOX. Other results indicate that MITLL 3DIC technology can be hardened to ionizing radiation by modifying the BOX. United States. Defense Threat Reduction Agency (Air Force Contract FA8721-05-C-0002) United States. Defense Advanced Research Projects Agency 2010-10-14T20:49:35Z 2010-10-14T20:49:35Z 2009-11 2009-10 Article http://purl.org/eprint/type/JournalArticle 978-1-4244-4256-0 1078-621X INSPEC Accession Number: 10964643 http://hdl.handle.net/1721.1/59350 Gouker, P.M. et al. “Radiation effects in MIT Lincoln lab 3DIC technology.” SOI Conference, 2009 IEEE International. 2009. 1-2. ©2009 Institute of Electrical and Electronics Engineers. en_US http://dx.doi.org/10.1109/SOI.2009.5318752 2009 IEEE International SOI Conference Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | Gouker, Pascale M. Wyatt, Peter W. Yost, Donna-Ruth W. Chen, Chenson K. Chen, Chang-Lee Knecht, Jeffrey M. Keast, Craig L. Radiation effects in MIT Lincoln Lab 3DIC technology |
| title | Radiation effects in MIT Lincoln Lab 3DIC technology |
| title_full | Radiation effects in MIT Lincoln Lab 3DIC technology |
| title_fullStr | Radiation effects in MIT Lincoln Lab 3DIC technology |
| title_full_unstemmed | Radiation effects in MIT Lincoln Lab 3DIC technology |
| title_short | Radiation effects in MIT Lincoln Lab 3DIC technology |
| title_sort | radiation effects in mit lincoln lab 3dic technology |
| url | http://hdl.handle.net/1721.1/59350 |
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