A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

A model for the critical voltage for electrical degradation of GaN high electron mobility transistors

We have found that there is a critical drain-to-gate voltage beyond which GaN high-electron mobility transistors start to degrade in electrical-stress experiments. The critical voltage depends on the detailed voltage biasing of the device during electrical stress. It is higher in the OFF state and h...

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Bibliographic Details
Main Authors: Joh, Jungwoo, del Alamo, Jesus A.
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Subjects:
DC stress
GaN
degradation
high-electron mobility transistor (HEMT)
reliability
Online Access:http://hdl.handle.net/1721.1/59403

Internet

http://hdl.handle.net/1721.1/59403

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