A model for the critical voltage for electrical degradation of GaN high electron mobility transistors
We have found that there is a critical drain-to-gate voltage beyond which GaN high-electron mobility transistors start to degrade in electrical-stress experiments. The critical voltage depends on the detailed voltage biasing of the device during electrical stress. It is higher in the OFF state and h...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/59403 |
| _version_ | 1811084568498798592 |
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| author | Joh, Jungwoo del Alamo, Jesus A. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Joh, Jungwoo del Alamo, Jesus A. |
| author_sort | Joh, Jungwoo |
| collection | MIT |
| description | We have found that there is a critical drain-to-gate voltage beyond which GaN high-electron mobility transistors start to degrade in electrical-stress experiments. The critical voltage depends on the detailed voltage biasing of the device during electrical stress. It is higher in the OFF state and high-power state than at VDS = 0. In addition, as |VGS| increases, the critical voltage decreases. We have also found that the stress current does not affect the critical voltage although soft degradation at low voltages takes place at high stress currents. All of our findings are consistent with a degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effect. Hot-electron-based mechanisms seem to be in contradiction with our experimental results. |
| first_indexed | 2024-09-23T12:53:15Z |
| format | Article |
| id | mit-1721.1/59403 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T12:53:15Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/594032022-09-28T10:41:11Z A model for the critical voltage for electrical degradation of GaN high electron mobility transistors Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors Joh, Jungwoo del Alamo, Jesus A. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories del Alamo, Jesus A. Joh, Jungwoo del Alamo, Jesus A. DC stress GaN degradation high-electron mobility transistor (HEMT) reliability We have found that there is a critical drain-to-gate voltage beyond which GaN high-electron mobility transistors start to degrade in electrical-stress experiments. The critical voltage depends on the detailed voltage biasing of the device during electrical stress. It is higher in the OFF state and high-power state than at VDS = 0. In addition, as |VGS| increases, the critical voltage decreases. We have also found that the stress current does not affect the critical voltage although soft degradation at low voltages takes place at high stress currents. All of our findings are consistent with a degradation mechanism based on crystallographic-defect formation due to the inverse piezoelectric effect. Hot-electron-based mechanisms seem to be in contradiction with our experimental results. United States. Army Research Laboratory (Contract W911QX-05-C-0087) 2010-10-19T15:53:10Z 2010-10-19T15:53:10Z 2008-03 2008-01 Article http://purl.org/eprint/type/JournalArticle 0741-3106 INSPEC Accession Number: 9920456 http://hdl.handle.net/1721.1/59403 Jungwoo Joh, and J.A. del Alamo. “Critical Voltage for Electrical Degradation of GaN High-Electron Mobility Transistors.” Electron Device Letters, IEEE 29.4 (2008): 287-289. © 2008 IEEE en_US http://dx.doi.org/10.1109/LED.2008.917815 IEEE Electron Device Letters Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | DC stress GaN degradation high-electron mobility transistor (HEMT) reliability Joh, Jungwoo del Alamo, Jesus A. A model for the critical voltage for electrical degradation of GaN high electron mobility transistors |
| title | A model for the critical voltage for electrical degradation of GaN high electron mobility transistors |
| title_full | A model for the critical voltage for electrical degradation of GaN high electron mobility transistors |
| title_fullStr | A model for the critical voltage for electrical degradation of GaN high electron mobility transistors |
| title_full_unstemmed | A model for the critical voltage for electrical degradation of GaN high electron mobility transistors |
| title_short | A model for the critical voltage for electrical degradation of GaN high electron mobility transistors |
| title_sort | model for the critical voltage for electrical degradation of gan high electron mobility transistors |
| topic | DC stress GaN degradation high-electron mobility transistor (HEMT) reliability |
| url | http://hdl.handle.net/1721.1/59403 |
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