A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates

A high performance differential amplifier through the direct monolithic integration of InP HBTs and Si CMOS on silicon substrates

We present results on the direct monolithic integration of III-V devices and Si CMOS on a silicon substrate. InP HBTs (0.5 times 5 um2 emitter) with ft and fmax > 200 GHz were grown directly in windows adjacent to CMOS transistors on silicon template wafers or SOLES (Silicon on Lattices Engineer...

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Bibliographic Details
Main Authors: Bulsara, Mayank, Fitzgerald, Eugene A., LaRoche, J. R., Kazior, T. E., Lubyshev, D., Fastenau, J. M., Liu, W. K., Urteaga, M., Ha, W., Bergman, J., Choe, M. J., Smith, D., Clark, D., Thompson, R., Drazek, C., Daval, N., Benaissa, L., Augendre, E.
Other Authors: MIT Materials Research Laboratory
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Subjects:
CMOS integrated circuits
Differential amplifiers
Indium Phosphide
Heterojunction bipolar transistors
Monolithic integrated circuits
Silicon
Online Access:http://hdl.handle.net/1721.1/59435
https://orcid.org/0000-0002-1891-1959

Internet

http://hdl.handle.net/1721.1/59435
https://orcid.org/0000-0002-1891-1959

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