Impact of 〈110〉 uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors

Impact of 〈110〉 uniaxial strain on n-channel In0.15Ga0.85As high electron mobility transistors

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This letter reports on a study of the impact of 〈110〉 uniaxial strain on the characteristics of InGaAs high electron mobility transistors (HEMT) by bending GaAs chips up to a strain level of 0.4%. Systematic changes in the threshold voltage and intrinsic transconductance were observed. These change...

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Bibliographic Details
Main Authors: del Alamo, Jesus A., Xia, Ling
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: American Institute of Physics 2010
Online Access:http://hdl.handle.net/1721.1/59449

Internet

http://hdl.handle.net/1721.1/59449

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