Performance analysis of ultra-scaled InAs HEMTs

The scaling behavior of ultra-scaled InAs HEMTs is investigated using a 2-dimensional real-space effective mass ballistic quantum transport simulator. The simulation methodology is first benchmarked against experimental Id-Vgs data obtained from devices with gate lengths ranging from 30 to 50 nm, wh...

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Bibliographic Details
Main Authors: del Alamo, Jesus A., Kim, Dae-Hyun, Kharche, Neerav, Luisier, Mathieu
Other Authors: Massachusetts Institute of Technology. Microsystems Technology Laboratories
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Online Access:http://hdl.handle.net/1721.1/59451