Performance analysis of ultra-scaled InAs HEMTs
The scaling behavior of ultra-scaled InAs HEMTs is investigated using a 2-dimensional real-space effective mass ballistic quantum transport simulator. The simulation methodology is first benchmarked against experimental Id-Vgs data obtained from devices with gate lengths ranging from 30 to 50 nm, wh...
| Principais autores: | , , , |
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| Outros Autores: | |
| Formato: | Artigo |
| Idioma: | en_US |
| Publicado em: |
Institute of Electrical and Electronics Engineers
2010
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| Acesso em linha: | http://hdl.handle.net/1721.1/59451 |