Extraction of Virtual-Source Injection Velocity in sub-100 nm III-V HFETs
We have experimentally extracted the virtual-source electron injection velocity, vx0, of various III-V HFETs at room temperature. This is the carrier velocity that matters for logic applications of these transistors. Sub-100 nm devices with mu n > 10,000 cm2/V-s exhibit vx0 in excess of 3 x 107...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/59455 https://orcid.org/0000-0002-4836-6525 |