Extraction of Virtual-Source Injection Velocity in sub-100 nm III-V HFETs
We have experimentally extracted the virtual-source electron injection velocity, vx0, of various III-V HFETs at room temperature. This is the carrier velocity that matters for logic applications of these transistors. Sub-100 nm devices with mu n > 10,000 cm2/V-s exhibit vx0 in excess of 3 x 107...
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| Format: | Article |
| Language: | en_US |
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Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/59455 https://orcid.org/0000-0002-4836-6525 |
| _version_ | 1826194723064250368 |
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| author | Brar, B. Kim, D. H. del Alamo, Jesus A. Antoniadis, Dimitri A. |
| author2 | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science |
| author_facet | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Brar, B. Kim, D. H. del Alamo, Jesus A. Antoniadis, Dimitri A. |
| author_sort | Brar, B. |
| collection | MIT |
| description | We have experimentally extracted the virtual-source electron injection velocity, vx0, of various III-V HFETs at room temperature. This is the carrier velocity that matters for logic applications of these transistors. Sub-100 nm devices with mu n > 10,000 cm2/V-s exhibit vx0 in excess of 3 x 107 cm/s even at V[subscript DD] = 0.5 V. This is over 2 times that of state-of-the-art Si devices at V[subscript DD]> 1. We have verified our extraction methodology for vx0 by building a simple charge-based semi-empirical model for the I-V characteristics of III-V HFETs. This model yields an excellent description of the entire I-V characteristics of the devices from subthreshold to inversion and from linear to saturation regimes with fitted electron velocities that are very close to those independently obtained through our proposed extraction methodology. |
| first_indexed | 2024-09-23T10:01:08Z |
| format | Article |
| id | mit-1721.1/59455 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T10:01:08Z |
| publishDate | 2010 |
| publisher | Institute of Electrical and Electronics Engineers |
| record_format | dspace |
| spelling | mit-1721.1/594552022-09-30T18:18:11Z Extraction of Virtual-Source Injection Velocity in sub-100 nm III-V HFETs Brar, B. Kim, D. H. del Alamo, Jesus A. Antoniadis, Dimitri A. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Massachusetts Institute of Technology. Microsystems Technology Laboratories del Alamo, Jesus A. Kim, D. H. del Alamo, Jesus A. Antoniadis, Dimitri A. We have experimentally extracted the virtual-source electron injection velocity, vx0, of various III-V HFETs at room temperature. This is the carrier velocity that matters for logic applications of these transistors. Sub-100 nm devices with mu n > 10,000 cm2/V-s exhibit vx0 in excess of 3 x 107 cm/s even at V[subscript DD] = 0.5 V. This is over 2 times that of state-of-the-art Si devices at V[subscript DD]> 1. We have verified our extraction methodology for vx0 by building a simple charge-based semi-empirical model for the I-V characteristics of III-V HFETs. This model yields an excellent description of the entire I-V characteristics of the devices from subthreshold to inversion and from linear to saturation regimes with fitted electron velocities that are very close to those independently obtained through our proposed extraction methodology. Intel Corporation Semiconductor Research Corporation. Center for Materials, Structures and Devices 2010-10-21T20:30:37Z 2010-10-21T20:30:37Z 2010-03 2009-12 Article http://purl.org/eprint/type/JournalArticle 978-1-4244-5640-6 978-1-4244-5639-0 INSPEC Accession Number: 11207312 http://hdl.handle.net/1721.1/59455 Kim, D.-H. et al. “Extraction of virtual-source injection velocity in sub-100 nm III–V HFETs.” Electron Devices Meeting (IEDM), 2009 IEEE International. 2009. 1-4. © 2010 Institute of Electrical and Electronics Engineers. https://orcid.org/0000-0002-4836-6525 en_US http://dx.doi.org/10.1109/IEDM.2009.5424268 2009 IEEE International Electron Devices Meeting (IEDM) Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf Institute of Electrical and Electronics Engineers IEEE |
| spellingShingle | Brar, B. Kim, D. H. del Alamo, Jesus A. Antoniadis, Dimitri A. Extraction of Virtual-Source Injection Velocity in sub-100 nm III-V HFETs |
| title | Extraction of Virtual-Source Injection Velocity in sub-100 nm III-V HFETs |
| title_full | Extraction of Virtual-Source Injection Velocity in sub-100 nm III-V HFETs |
| title_fullStr | Extraction of Virtual-Source Injection Velocity in sub-100 nm III-V HFETs |
| title_full_unstemmed | Extraction of Virtual-Source Injection Velocity in sub-100 nm III-V HFETs |
| title_short | Extraction of Virtual-Source Injection Velocity in sub-100 nm III-V HFETs |
| title_sort | extraction of virtual source injection velocity in sub 100 nm iii v hfets |
| url | http://hdl.handle.net/1721.1/59455 https://orcid.org/0000-0002-4836-6525 |
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