Scalability of sub-100 nm thin-channel InAs PHEMTs
We have experimentally investigated the role of thinning down the channel thickness and using high InAs composition as a channel material, which aims to improve the electrostatic integrity of the device as well as high frequency characteristics of the device. To do so, we have fabricated InAs PHEMTs...
| Main Authors: | , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers
2010
|
| Online Access: | http://hdl.handle.net/1721.1/59462 |