Modeling frequency response of 65 nm CMOS RF power devices

Modeling frequency response of 65 nm CMOS RF power devices

This paper presents a model for the frequency response of 65 nm RF power CMOS devices as a function of device width. We find that the cut-off frequency (f[subscript T]) and maximum oscillation frequency (f[subscript max]) decrease with increasing device width. Small-signal equivalent circuit extract...

Full description

Bibliographic Details
Main Authors: Gogineni, Usha, del Alamo, Jesus A., Putnam, Christopher, Greenberg, David
Other Authors: Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Format: Article
Language:en_US
Published: 2010
Online Access:http://hdl.handle.net/1721.1/59812

Internet

http://hdl.handle.net/1721.1/59812

Similar Items