Low-temperature germanium ultra-high vacuum chemical vapor deposition for back-end photonic integration

Low-temperature germanium ultra-high vacuum chemical vapor deposition for back-end photonic integration

Polycrystalline germanium (poly-Ge) grown on amorphous Si (a-Si) by ultra-high vacuum chemical vapor deposition (UHVCVD) over oxide barriers at low temperatures (Tles450degC) exhibits a larger grain size and lower defect density than the as-grown poly-Ge next to the oxide barriers. Poly-Ge as deposi...

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Bibliographic Details
Main Authors: Kimerling, Lionel C., McComber, Kevin A., Lui, Jifeng, Michel, Jurgen
Other Authors: MIT Materials Research Laboratory
Format: Article
Language:en_US
Published: Institute of Electrical and Electronics Engineers 2010
Online Access:http://hdl.handle.net/1721.1/59994
https://orcid.org/0000-0002-3913-6189

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http://hdl.handle.net/1721.1/59994
https://orcid.org/0000-0002-3913-6189

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