Low-temperature germanium ultra-high vacuum chemical vapor deposition for back-end photonic integration
Polycrystalline germanium (poly-Ge) grown on amorphous Si (a-Si) by ultra-high vacuum chemical vapor deposition (UHVCVD) over oxide barriers at low temperatures (Tles450degC) exhibits a larger grain size and lower defect density than the as-grown poly-Ge next to the oxide barriers. Poly-Ge as deposi...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
Institute of Electrical and Electronics Engineers
2010
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| Online Access: | http://hdl.handle.net/1721.1/59994 https://orcid.org/0000-0002-3913-6189 |
| Summary: | Polycrystalline germanium (poly-Ge) grown on amorphous Si (a-Si) by ultra-high vacuum chemical vapor deposition (UHVCVD) over oxide barriers at low temperatures (Tles450degC) exhibits a larger grain size and lower defect density than the as-grown poly-Ge next to the oxide barriers. Poly-Ge as deposited at 450degC is p-type, but the introduction of PH[subscript 3] during Ge deposition gives n-type poly-Ge with n = 2.1times10[superscript 18] cm[superscript -3]. The possible defect reduction and range of doping make poly-Ge a strong candidate for application to CMOS-compatible back-end photonic devices. |
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