Electronic Transport in Dual-Gated Bilayer Graphene at Large Displacement Fields
We study the electronic transport properties of dual-gated bilayer graphene devices. We focus on the regime of low temperatures and high electric displacement fields, where we observe a clear exponential dependence of the resistance as a function of displacement field and density, accompanied by a s...
| Hlavní autoři: | , |
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| Médium: | Článek |
| Jazyk: | en_US |
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American Physical Society
2011
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| On-line přístup: | http://hdl.handle.net/1721.1/60864 https://orcid.org/0000-0001-8217-8213 |