Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth
We describe a method of detecting nanometer-level gap and tip/tilt alignment between a focusing zone plate mask and a silicon substrate using interferometric-spatial-phase-imaging (ISPI). The zone plate mask is used to generate submicrometer focused light spot to induce silicon nanowire growth in a...
| Main Authors: | , , , , , |
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| 其他作者: | |
| 格式: | 文件 |
| 语言: | en_US |
| 出版: |
SPIE
2011
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| 在线阅读: | http://hdl.handle.net/1721.1/60945 |