Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth
We describe a method of detecting nanometer-level gap and tip/tilt alignment between a focusing zone plate mask and a silicon substrate using interferometric-spatial-phase-imaging (ISPI). The zone plate mask is used to generate submicrometer focused light spot to induce silicon nanowire growth in a...
Main Authors: | , , , , , |
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其他作者: | |
格式: | 文件 |
语言: | en_US |
出版: |
SPIE
2011
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在线阅读: | http://hdl.handle.net/1721.1/60945 |