Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth

We describe a method of detecting nanometer-level gap and tip/tilt alignment between a focusing zone plate mask and a silicon substrate using interferometric-spatial-phase-imaging (ISPI). The zone plate mask is used to generate submicrometer focused light spot to induce silicon nanowire growth in a...

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书目详细资料
Main Authors: Srisungsitthisunti, Pornsak, Tansarawiput, Chookiat, Zhang, Huaichen, Qi, Minghao, Xu, Xianfan, Moon, Euclid Eberle
其他作者: Massachusetts Institute of Technology. Research Laboratory of Electronics
格式: 文件
语言:en_US
出版: SPIE 2011
在线阅读:http://hdl.handle.net/1721.1/60945