Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth
We describe a method of detecting nanometer-level gap and tip/tilt alignment between a focusing zone plate mask and a silicon substrate using interferometric-spatial-phase-imaging (ISPI). The zone plate mask is used to generate submicrometer focused light spot to induce silicon nanowire growth in a...
| Main Authors: | , , , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
SPIE
2011
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| Online Access: | http://hdl.handle.net/1721.1/60945 |
| _version_ | 1826199863812947968 |
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| author | Srisungsitthisunti, Pornsak Tansarawiput, Chookiat Zhang, Huaichen Qi, Minghao Xu, Xianfan Moon, Euclid Eberle |
| author2 | Massachusetts Institute of Technology. Research Laboratory of Electronics |
| author_facet | Massachusetts Institute of Technology. Research Laboratory of Electronics Srisungsitthisunti, Pornsak Tansarawiput, Chookiat Zhang, Huaichen Qi, Minghao Xu, Xianfan Moon, Euclid Eberle |
| author_sort | Srisungsitthisunti, Pornsak |
| collection | MIT |
| description | We describe a method of detecting nanometer-level gap and tip/tilt alignment between a focusing zone plate mask and a silicon substrate using interferometric-spatial-phase-imaging (ISPI). The zone plate mask is used to generate submicrometer focused light spot to induce silicon nanowire growth in a CVD process. ISPI makes use of diffracting fringes from gratings and checkerboards fabricated on the mask to determine the correct gapping distance for the focusing zone plates. The method is capable of detecting alignment inside a gas-flow chamber with variable pressure. |
| first_indexed | 2024-09-23T11:27:01Z |
| format | Article |
| id | mit-1721.1/60945 |
| institution | Massachusetts Institute of Technology |
| language | en_US |
| last_indexed | 2024-09-23T11:27:01Z |
| publishDate | 2011 |
| publisher | SPIE |
| record_format | dspace |
| spelling | mit-1721.1/609452022-09-27T19:35:15Z Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth Srisungsitthisunti, Pornsak Tansarawiput, Chookiat Zhang, Huaichen Qi, Minghao Xu, Xianfan Moon, Euclid Eberle Massachusetts Institute of Technology. Research Laboratory of Electronics Moon, Euclid Eberle Moon, Euclid Eberle We describe a method of detecting nanometer-level gap and tip/tilt alignment between a focusing zone plate mask and a silicon substrate using interferometric-spatial-phase-imaging (ISPI). The zone plate mask is used to generate submicrometer focused light spot to induce silicon nanowire growth in a CVD process. ISPI makes use of diffracting fringes from gratings and checkerboards fabricated on the mask to determine the correct gapping distance for the focusing zone plates. The method is capable of detecting alignment inside a gas-flow chamber with variable pressure. United States. Defense Advanced Research Projects Agency (DARPA) (Grant No. N66001-08-1-2037) 2011-02-15T13:41:47Z 2011-02-15T13:41:47Z 2010-08 2010-08 Article http://purl.org/eprint/type/ConferencePaper 0277-786X http://hdl.handle.net/1721.1/60945 Pornsak Srisungsitthisunti, Euclid E. Moon, Chookiat Tansarawiput, Huaichen Zhang, Minghao Qi and Xianfan Xu, "Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth", Proc. SPIE 7767, 776707 (2010); doi:10.1117/12.860581 © 2010 COPYRIGHT SPIE en_US http://dx.doi.org/10.1117/12.860581 Proceedings of SPIE--the International Society for Optical Engineering Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. application/pdf SPIE SPIE |
| spellingShingle | Srisungsitthisunti, Pornsak Tansarawiput, Chookiat Zhang, Huaichen Qi, Minghao Xu, Xianfan Moon, Euclid Eberle Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth |
| title | Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth |
| title_full | Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth |
| title_fullStr | Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth |
| title_full_unstemmed | Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth |
| title_short | Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth |
| title_sort | nanometer level alignment using interferometric spatial phase imaging ispi during silicon nanowire growth |
| url | http://hdl.handle.net/1721.1/60945 |
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