Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth

Nanometer-level alignment using interferometric-spatial-phase-imaging (ISPI) during silicon nanowire growth

We describe a method of detecting nanometer-level gap and tip/tilt alignment between a focusing zone plate mask and a silicon substrate using interferometric-spatial-phase-imaging (ISPI). The zone plate mask is used to generate submicrometer focused light spot to induce silicon nanowire growth in a...

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Bibliographic Details
Main Authors: Srisungsitthisunti, Pornsak, Tansarawiput, Chookiat, Zhang, Huaichen, Qi, Minghao, Xu, Xianfan, Moon, Euclid Eberle
Other Authors: Massachusetts Institute of Technology. Research Laboratory of Electronics
Format: Article
Language:en_US
Published: SPIE 2011
Online Access:http://hdl.handle.net/1721.1/60945

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