Gate-all-around silicon nanowire MOSFETs : top-down fabrication and transport enhancement techniques

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.

Bibliographic Details
Main Author:	Hashemi, Pouya
Other Authors:	Judy L. Hoyt.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2011
Subjects:	Electrical Engineering and Computer Science.
Online Access:	http://hdl.handle.net/1721.1/62313

Internet

http://hdl.handle.net/1721.1/62313