Gate-all-around silicon nanowire MOSFETs : top-down fabrication and transport enhancement techniques

Gate-all-around silicon nanowire MOSFETs : top-down fabrication and transport enhancement techniques

Thesis (Ph. D.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2010.

Bibliographic Details
Main Author: Hashemi, Pouya
Other Authors: Judy L. Hoyt.
Format: Thesis
Language:eng
Published: Massachusetts Institute of Technology 2011
Subjects:
Electrical Engineering and Computer Science.
Online Access:http://hdl.handle.net/1721.1/62313

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