Dislocation mechanism of interface point defect migration

Vacancies and interstitials absorbed at Cu-Nb interfaces are shown to migrate by a multistage process involving the thermally-activated formation, motion, and annihilation of kinks and jogs on interface misfit dislocations. This mechanism, including the energy along the entire migration path, can be...

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Bibliographic Details
Main Authors: Kolluri, Kedarnath, Demkowicz, Michael J.
Other Authors: Massachusetts Institute of Technology. Department of Materials Science and Engineering
Format: Article
Language:en_US
Published: American Physical Society 2011
Online Access:http://hdl.handle.net/1721.1/62855
https://orcid.org/0000-0003-3949-0441