Lifetime of high-k gate dielectrics and analogy with strength of quasibrittle structures
The two-parameter Weibull distribution has been widely adopted to model the lifetime statistics of dielectric breakdown under constant voltage, but recent lifetime testing for high-k gate dielectrics has revealed a systematic departure from Weibull statistics, evocative of lifetime statistics for sm...
| Main Authors: | , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics
2011
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| Online Access: | http://hdl.handle.net/1721.1/63693 |