Lifetime of high-k gate dielectrics and analogy with strength of quasibrittle structures

Lifetime of high-k gate dielectrics and analogy with strength of quasibrittle structures

The two-parameter Weibull distribution has been widely adopted to model the lifetime statistics of dielectric breakdown under constant voltage, but recent lifetime testing for high-k gate dielectrics has revealed a systematic departure from Weibull statistics, evocative of lifetime statistics for sm...

Полное описание

Библиографические подробности
Главные авторы:	Le, Jia-Liang, Bazant, Zdenek P., Bazant, Martin Z.
Другие авторы:	Massachusetts Institute of Technology. Department of Chemical Engineering
Формат:	Статья
Язык:	en_US
Опубликовано:	American Institute of Physics 2011
Online-ссылка:	http://hdl.handle.net/1721.1/63693

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