Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack

Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011.

Bibliographic Details
Main Author:	Polyzoeva, Evelina Aleksandrova
Other Authors:	Dimitri A. Antoniadis.
Format:	Thesis
Language:	eng
Published:	Massachusetts Institute of Technology 2011
Subjects:	Electrical Engineering and Computer Science.
Online Access:	http://hdl.handle.net/1721.1/64597

Internet

http://hdl.handle.net/1721.1/64597