Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack
Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011.
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| Format: | Thesis |
| Language: | eng |
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Massachusetts Institute of Technology
2011
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| Online Access: | http://hdl.handle.net/1721.1/64597 |
| _version_ | 1826190024258879488 |
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| author | Polyzoeva, Evelina Aleksandrova |
| author2 | Dimitri A. Antoniadis. |
| author_facet | Dimitri A. Antoniadis. Polyzoeva, Evelina Aleksandrova |
| author_sort | Polyzoeva, Evelina Aleksandrova |
| collection | MIT |
| description | Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011. |
| first_indexed | 2024-09-23T08:33:51Z |
| format | Thesis |
| id | mit-1721.1/64597 |
| institution | Massachusetts Institute of Technology |
| language | eng |
| last_indexed | 2024-09-23T08:33:51Z |
| publishDate | 2011 |
| publisher | Massachusetts Institute of Technology |
| record_format | dspace |
| spelling | mit-1721.1/645972022-01-13T07:54:29Z Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack Polyzoeva, Evelina Aleksandrova Dimitri A. Antoniadis. Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science Electrical Engineering and Computer Science. Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 2011. Cataloged from PDF version of thesis. Includes bibliographical references (p. 46-48). The need for high speed and density in the modem semiconductor industry requires new channel materials and techniques for improved carrier transport and continuous scaling of the device dimensions. As a material for enhanced hole transport strained-Ge is implemented in this work. High-k dielectric and metal gate stack is used for improved electrostatic control, as an alternative to the unstable native oxides. The hole mobility of strained-Ge ring-FETs with and without Si cap and with A12 0 3/WN gate stack is investigated. The dependence of the mobility on the strained-Ge layer thickness and the silicon cap thickness is explored. Decrease of 13 % in the hole mobility is observed in the devices with thicker Ge channel suggesting partial relaxation of the strained-Ge. Removal of the Si cap results in almost 40 % decrease in hole mobility suggesting that the presence Si cap is required in realizing high mobility devices. by Evelina Aleksandrova Polyzoeva. S.M. 2011-06-20T15:57:50Z 2011-06-20T15:57:50Z 2011 2011 Thesis http://hdl.handle.net/1721.1/64597 727066521 eng M.I.T. theses are protected by copyright. They may be viewed from this source for any purpose, but reproduction or distribution in any format is prohibited without written permission. See provided URL for inquiries about permission. http://dspace.mit.edu/handle/1721.1/7582 vi, 48 p. application/pdf Massachusetts Institute of Technology |
| spellingShingle | Electrical Engineering and Computer Science. Polyzoeva, Evelina Aleksandrova Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack |
| title | Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack |
| title_full | Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack |
| title_fullStr | Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack |
| title_full_unstemmed | Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack |
| title_short | Hole mobility in strained Ge/relaxed SiGe with a High-k/metal gate stack |
| title_sort | hole mobility in strained ge relaxed sige with a high k metal gate stack |
| topic | Electrical Engineering and Computer Science. |
| url | http://hdl.handle.net/1721.1/64597 |
| work_keys_str_mv | AT polyzoevaevelinaaleksandrova holemobilityinstrainedgerelaxedsigewithahighkmetalgatestack |