Mechanism and dynamics of the reaction of XeF2 with fluorinated Si(100): Possible role of gas phase dissociation of a surface reaction product in plasmaless etching
Xenon difluoride is observed to react with Si–Si σ-dimer and σ-lattice bonds of Si(100)2×1 at 150 K by single and two atom abstraction at F coverages above 1 ML. As in the limit of zero F coverage, a measurable fraction of the scattered, gas phase product of single atom abstraction, XeF, is sufficie...
| Main Authors: | , , , |
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| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics
2011
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| Online Access: | http://hdl.handle.net/1721.1/64720 https://orcid.org/0000-0002-9989-6622 |