Role of lattice strain and defect chemistry on the oxygen vacancy migration at the (8.3%Y2O3-ZRO2)/SrTiO3 hetero-interface: A first principles study

Role of lattice strain and defect chemistry on the oxygen vacancy migration at the (8.3%Y2O3-ZRO2)/SrTiO3 hetero-interface: A first principles study

We report on the mechanism and the upper limits in the increase of oxygen ion conductivity at oxide hetero-interfaces, particularly the 8.3%Y2O3-ZrO2/SrTiO3 (YSZ/STO) as a model interface. We consider two factors contributing to the increase in ionic conductivity at or near the interface: 1) a favor...

Full description

Bibliographic Details
Main Authors: Kushima, Akihiro, Yildiz, Bilge
Other Authors: Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Format: Article
Language:en_US
Published: Electrochemical Society 2011
Online Access:http://hdl.handle.net/1721.1/65655
https://orcid.org/0000-0002-2688-5666

Internet

http://hdl.handle.net/1721.1/65655
https://orcid.org/0000-0002-2688-5666

Similar Items