The effect of excess atomic volume on He bubble formation at fcc-bcc interfaces
Atomistic modeling shows that Cu–Nb and Cu–V interfaces contain high excess atomic volume due to constitutional vacancy concentrations of ∼ 5 at. % and ∼ 0.8 at. %., respectively. This finding is supported by experiments demonstrating that an approximately fivefold higher He concentration is require...
| Main Authors: | , , , , , |
|---|---|
| Other Authors: | |
| Format: | Article |
| Language: | en_US |
| Published: |
American Institute of Physics
2012
|
| Online Access: | http://hdl.handle.net/1721.1/69035 https://orcid.org/0000-0003-3949-0441 |